Other articles related with "floating body effect":
36103 Pengcheng Huang(黄鹏程), Shuming Chen(陈书明), Jianjun Chen(陈建军)
  Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology
    Chin. Phys. B   2016 Vol.25 (3): 36103-036103 [Abstract] (671) [HTML 0 KB] [PDF 663 KB] (325)
108501 Wu Qing-Qing (伍青青), Chen Jing (陈静), Luo Jie-Xin (罗杰馨), Lü Kai (吕凯), Yu Tao (余涛), Chai Zhan (柴展), Wang Xi (王曦)
  Gate-to-body tunneling current model for silicon-on-insulator MOSFETs
    Chin. Phys. B   2013 Vol.22 (10): 108501-108501 [Abstract] (651) [HTML 1 KB] [PDF 267 KB] (552)
56602 Luo Jie-Xin(罗杰馨), Chen Jing(陈静), Zhou Jian-Hua(周建华), Wu Qing-Qing(伍青青), Chai Zhan(柴展), Yu Tao(余涛), and Wang Xi(王曦)
  Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs
    Chin. Phys. B   2012 Vol.21 (5): 56602-056602 [Abstract] (1395) [HTML 1 KB] [PDF 268 KB] (761)
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